Institute for High-Frequency and Communication Technology
Prof. Dr. rer. nat. Ullrich Pfeiffer
Marcel Andree, M.Sc.
Bergische Universität Wuppertal,
Rainer-Gruenter-Str. 21, Gebäude FE
Raum 00.09 (Erdgeschoß)
Marcel Andree received the B.Sc. degree and M.Sc. degree (passed with honours) in electrical engineering from the University of Wuppertal, Germany,in 2015 and 2017 respectively, where he focussed on the development and optimization of integrated mixed signal circuits. In 2017 he joined the Institute for High Frequency and Communication Technology and is currently working towards the Ph.D. degree. His research interests include terahertz integrated circuit and system design in silicon Technologies. His Research is currently focussing on: THz polarimetric imaging, THz Radiometer design, and THz detector design in modern nanoscale CMOS and SiGe-HBT technology.
A Lens-Coupled On-Chip Antenna for Dual-Polarization SiGe HBT THz Direct DetectorIEEE Antennas and Wireless Propagation Letters, 18(11):2404-2408
Schlüsselwörter: Impedance;Detectors;Geometry;Feeds;Silicon;Layout;Antenna-circuit co-design;dual-polarization;on-chip antenna;SiGe heterojunction bipolar transistor (HBT);terahertz direct detector
A Broadband Antenna-Coupled Terahertz Direct Detector in a 0.13-µm SiGe HBT Technology2019 14th European Microwave Integrated Circuits Conference (EuMIC), :168-171
Schlüsselwörter: broadband antennas;Ge-Si alloys;heterojunction bipolar transistors;silicon;submillimetre wave antennas;submillimetre wave transistors;terahertz wave detectors;integrated silicon-lens coupled THz direct detector;broadband operation;antenna detector;common-base configuration;HBT transistors;SiGe HBT technology;broadband antenna-coupled terahertz direct detector;frequency 220.0 GHz to 1.0 THz;frequency 275.0 GHz to 525.0 GHz;frequency 350.0 GHz;frequency 550.0 GHz;frequency 292.0 GHz;frequency 100.0 kHz;resistance 1.83 kohm;size 0.13 mum;SiGe;Detectors;Broadband antennas;Impedance;Heterojunction bipolar transistors;Silicon;Silicon germanium;Terahertz detector;SiGe;NEP;on-chip antenna;HBT
A Broadband Dual-Polarized Terahertz Direct Detector in a 0.13-µm SiGe HBT Technology2019 IEEE MTT-S International Microwave Symposium (IMS), :500-503
Schlüsselwörter: Ge-Si alloys;heterojunction bipolar transistors;terahertz wave detectors;SiGe HBT technology;silicon lens;load resistance;silicon-integrated SiGe HBT;forward-active region;saturation region;differentially driven HBT transistors;differential wire-ring antenna;integrated wire-ring antenna;broadband dual-polarized terahertz direct detector;frequency 350.0 GHz;frequency 550.0 GHz;frequency 220.0 GHz to 1000.0 GHz;frequency 430.0 GHz to 476.0 GHz;frequency 300.0 GHz to 500.0 GHz;SiGe;Detectors;Broadband antennas;Voltage measurement;Antenna measurements;Heterojunction bipolar transistors;Resistance;Terahertz detector;SiGe;NEP;on-chip antenna;dual polarization;HBT