European Union (EU)
- Infineon Technologies (D)
- ST Microelectronics (F)
- IMEC (BE)
- IhP GmbH (D)
- Technical University of Dresden (D)
- University of Siegen (D)
- Johannes Kepler University (A)
- Universität der Bundeswehr München (D)
- University of Naples (I)
- University Paris Sud (F)
- ALMA Consulting Group SAS (F)
- University of Wuppertal (D)
Applications in the emerging high-frequency (h.f.) markets more and more use SiGe components for cost reasons. Current state-of-the-art research and development is taking place primarily in data communication and radar systems at 24, 60, and 77 GHz. For instance, IBM has just demonstrated that its state-of-the-art SiGe HBT technology has the potential to play a major role in high-volume consumer electronic markets by proving the feasibility of 2-Gbps uncompressed HDTV transmission over a 60-GHz SiGe HBT radio link.
The main drawbacks in existing designs, which operate typically at frequencies up to a third of the transit frequency fT, are the necessary high bias currents leading to a power dissipation of several watts per radar chip and a limited achievable noise figure (NF) in each building block. The former disadvantage results in additional cooling effort, which implies costly packaging and mounting procedures. The latter directly influences the overall performance, as the total signal-to-noise ratio (SNR) in homodyne systems is directly limited by the NF of the (active) mixer. Thus, technologies with higher fT can directly lead to improved automotive radar systems with higher performance at lower power consumption, which increases road safety and energy budget. With an increased fT completely new and highly integrated microwave sensor systems are feasible.
However, until recently, this spectral region has resisted attempts to broadly harness its potential for everyday applications. This led to the expression THz gap, loosely describing the lack of adequate technologies to effectively bridge this transition region between microwaves and optics, both readily accessible via well developed electronic and laser-based approaches. THz technology is an emerging field which has demonstrated a wide-ranging potential. Extensive research in the last years has identified many attractive application areas and has paved the technological path towards broadly usable THz systems. THz technology is currently in a pivotal phase and will soon be in a position to radically expand our analytic capabilities via its intrinsic benefits. In this context, DOTFIVE is planned to establish the basis for fully integrated cost efficient electronic THz solutions.
Feb 2008 - Jan 2011
European Union (EU)