European Union (EU)

(The goal of this ambitious R & D project is the development of silicon-germanium heterojunction bipolar transistors - SiGe HBT for the terahertz range)

EU-Vorhaben ESECS16104

Project Partners:

  • STMICROELECTRONICS S.A. (F)
  • STMICROELECTRONICS CROLLES 2 SAS (F)
  • UNIVERSITE DE MONTPELLIER (F)
  • UNIVERSITE DE BORDEAUX (F)
  • UNIVERSITE DES SCIENCES ET TECHNOLOGIES DE LILLE - LILLE I (F)
  • XMOD TECHNOLOGIES (F)
  • Inras GmbH (A)
  • UNIVERSITAT LINZ (A)
  • INFINEON TECHNOLOGIES AG (D)
  • INFINEON TECHNOLOGIES DRESDEN GMBH (D)
  • IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/
    LEIBNIZ- INSTITUT FUER INNOVATIVE MIKROELEKTRONIK (D)
  • MICRAM MICROELECTRONIC GMBH (D)
  • ALCATEL-LUCENT DEUTSCHLAND AG (D)
  • RUHR-UNIVERSITAET BOCHUM (D)
  • RHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN (D)
  • TECHNISCHE UNIVERSITAET DRESDEN (D)
  • UNIVERSITAT DES SAARLANDES (D)
  • UNIVERSITAET STUTTGART (D)
  • INTEGRATED SYSTEMS DEVELOPMENT S.A. (GR)
  • POLITECNICO DI MILANO (I)
  • STMICROELECTRONICS SRL (I)
  • UNIVERSITA DEGLI STUDI DI MODENA E REGGIO EMILIA (I)
  • UNIVERSITA DEGLI STUDI DI PAVIA (I)
  • UNIVERSITA DEGLI STUDI DI ROMA LA SAPIENZA (I)
  • INTERUNIVERSITAIR MICRO-ELECTRONICACENTRUM IMEC VZW (B)
  • DICE Danube Integrated Circuit Engineering GmbH & Co KG (A)
  • UNIVERSITA DELLA CALABRIA (I)
  • SIAE Microelettronica Spa (I)
  • UNIVERSITE GRENOBLE ALPES (F)
  • KARLSRUHER INSTITUT FUER TECHNOLOGIE (D)
  • NOKIA SOLUTIONS AND NETWORKS GMBH &CO KG (D)
  • BERGISCHE UNIVERSITAET WUPPERTAL (D)
  • FRIEDRICH-ALEXANDER-UNIVERSITAET ERLANGEN NUERNBERG (D)
  • Kathrein-Werke KG (D)

Project Objectives:

The TARANTO project targets to break the technological barriers to the development of the next BiCMOS technology platforms, allowing the improvement of the performance of the HBT (Heterojunction Bipolar Transistors) with a much higher level of integration. This new generation of transistors HBT will be a key factor to meet the needs of high-speed communications systems and high data rate required for the integration of heterogeneous intelligent systems as well as for intelligent mobility systems that will be used in future fully automated transport systems. The main objectives of this project will be to develop transistors HBT offering high maximum frequency (Fmax: 600GHz) built to very high density CMOS processes: 130 / 90nm for IFX, 55 / 28nm to ST, while IHP will work on the project to achieve maximum frequencies of 700GHz remaining compatible with IFX and ST BiCMOS processes. The project consortium gathers the main European players in the value chain for these applications at very high frequencies, from laboratories to industrial users, thus ensuring the highest scientific level and the ability to validate the work carried out on appropriate demonstrators.

Informations

Project duration:
April 2017  - Nov. 2020

Funding:
European Union (EU)

Tags
Terahertz Technology, HBT, SiGe

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